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RTF025N03
Transistors
Electrical characteristics (Ta=25 ° C)
Parameter
Gate-source leakage
Symbol
I GSS
Min.
?
Typ.
?
Max.
10
Unit
μ A
Conditions
V GS =12V, V DS =0V
Drain-source breakdown voltage V (BR) DSS
30
?
?
V
I D = 1mA, V GS =0V
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
I DSS
V GS (th)
R DS (on) ?
?
0.5
?
?
?
?
?
48
50
70
1
1.5
67
70
98
μ A
V
m ?
m ?
m ?
V DS = 30V, V GS =0V
V DS = 10V, I D = 1mA
I D = 2.5A, V GS = 4.5V
I D = 2.5A, V GS = 4V
I D = 2.5A, V GS = 2.5V
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Y fs
C iss
C oss
C rss
t d (on)
t r
t d (off)
t f
?
?
?
?
?
2
?
?
?
?
?
?
?
?
270
70
40
8
15
27
11
?
?
?
?
?
?
?
?
S
pF
pF
pF
ns
ns
ns
ns
V DS = 10V, I D = 2.5A
V DS = 10V
V GS =0V
f=1MHz
V DD 15V
I D = 1.25A
V GS = 4.5V
R L =12 ?
R G =10 ?
Total gate charge
Q g
?
?
3.7
5.2
nC
V DD
15V
Gate-source charge
Gate-drain charge
Q gs
Q gd
?
?
?
?
0.7
1.2
?
?
nC
nC
V GS = 4.5V
I D = 2.5A
? Pulsed
Body diode characteristics (Source-drain) (Ta=25 ° C)
Parameter
Forward voltage
Symbol
V SD
Min.
?
Typ.
?
Max.
1.2
Unit
V
Conditions
I S = 0.6A, V GS =0V
Rev.A
2/2
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